题目：Resistive switching in heterostructures of complex oxides

The rich physics as a result of strong correlation between charge, spin, orbital and lattice give complex oxides novel properties as well as potential applications. In heterostructures, we can explore even more opportunities due to the emergent phenomena of charge transfer, spin exchange, ionic migration and so on. Abrupt jumps or drops in current-voltage measurements have been noticed and investigated for decades, but a new wave of research helps to gain deeper insights on the complexity of oxide physics. Furthermore, these resistive switching, either nonvolatile (unipolar or bipolar) or volatile (threshold switching) is considered serious contender for memory applications (so called RRAM). Our experiments suggest that both the filamentary formation/rupture and the interface barrier modification play important roles in voltage- and current controlled resistive switching in oxide heterostructures. In addition, the electron correlation and charge transfer are modified in resistive switching materials, giving the rich transport behaviors. I will also discuss the resistive switching near the two-dimensional electron gas at the oxide interface in “digitally” synthesized heterostructures.