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光物理系列学术报告(第125期)

作者:佚名  来源:本站整理  发布时间:2016-3-16 9:36:17
 

题目: Molecular Beam Epitaxy growth of Semiconductor Nanostructures: present status and future prospects.

报告人:Professor Mark Hopkinson
Department of Electronic and Electrical Engineering. University of Sheffield. Sheffield S1 3JD. U.K.

摘要:

The talk will discuss the growth, structure and properties of self-assembled III-V semiconducting quantum dots produced by molecular beam epitaxy(MBE) growth. These quantum dotnanostructures of dimensions of in the 10nm range possess unique quantised electronic properties which can overcome some of the limitations of present-day optoelectronic devices, whilst offering new opportunities for quantum communications and computation. The talk will describe work performed on the synthesis of InGaAs quantum dots at Sheffield, including investigations of quantum dot structural properties, the electronic and optical properties of single quantum dots and quantum dot arrays and device applications in the fields of optical communications and sensing. Some of the limitations of present approaches and possible ways forward will be discussed. The talk will go on to examine future directions in MBE growth, including prospects for the integration with new materials, alternative nanostructures and methods to achieve higher degrees of ordering between individual nanostructures.

简介

Mark Hopkinson is Professor of Electronic Engineering at the University of Sheffield (Sheffield, UK). He has over 25 years of experience in III-V and Si-based semiconductors including materials synthesis, physical properties and device applications. He is world expert within the field of III-V epitaxial growth by Molecular Beam Epitaxy (MBE) and has published over 650 publications in this field. The activities of his group are concerned with the development of advanced semiconductor devices, with a major focus on III-V optoelectronic devices. The group enjoys a strong reputation in this area, with many invited talks, high profile international collaborations.

Professor Hopkinson’s research interests lie within the themes of semiconductor nanostructures, novel epitaxial materials, electronics-photonics integration and photonics for solar energy, sensing and optical communications.

时间:2016年1月18日上午10:00

地点:中科院物理研究所M253会议室

联系人:金奎娟 研究员 (Tel:82648099)

邀请人:许秀来 研究员 (Tel:82649820)

主办单位:中国科学院光物理重点实验室

 
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